TPS1100, TPS1100Y دیتاشیت

TPS1100, TPS1100Y

مشخصات دیتاشیت

نام دیتاشیت TPS1100, TPS1100Y
حجم فایل 755.541 کیلوبایت
نوع فایل pdf
تعداد صفحات 14

مشاهده دیتاشیت TPS1100, TPS1100Y

دانلود دیتاشیت

سایر مستندات

TPS1100DR 14 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments TPS1100DR
  • Operating Temperature: -40°C~+150°C@(Tj)
  • Power Dissipation (Pd): 791mW
  • Total Gate Charge (Qg@Vgs): 5.45nC@10V
  • Drain Source Voltage (Vdss): 15V
  • Continuous Drain Current (Id): 1.6A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 180mΩ@10V,1.5A
  • Package: SOP-8
  • Manufacturer: Texas Instruments
  • Series: -
  • Technology: MOSFET (Metal Oxide)
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Packaging: Tape & Reel (TR)
  • FET Feature: -
  • Vgs (Max): +2V, -15V
  • Part Status: Active
  • Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V
  • Mounting Type: Surface Mount
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Drain to Source Voltage (Vdss): 15V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Power Dissipation (Max): 791mW (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
  • Base Part Number: TPS110
  • FET Type: P-Channel
  • detail: P-Channel 15V 1.6A (Ta) 791mW (Ta) Surface Mount 8-SOIC

محصولات مشابه